Title :
Impurity profile effects of buffer layer on PT-IGBT characteristics
Author :
Kim, Chung-Hee ; Chung, Sang-Koo
Author_Institution :
Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea
Abstract :
The effects of Gaussian impurity profiles in the p+ anode/n-buffer layer of PT-IGBTs on device characteristics are studied numerically and analytically. The results are compared with those from the uniform impurity profiles. A better tradeoff between the forward voltage drop and the turn-off time is found in the Gaussian impurity profile.
Keywords :
carrier density; current density; doping profiles; impurity distribution; insulated gate bipolar transistors; power transistors; semiconductor device models; Gaussian impurity profiles; PT-IGBT characteristics; forward voltage drop; impurity profile effects; n-buffer layer; p+ anode; punch-through IGBT; turn-off time; Buffer layers; Dielectrics; Electrons; Germanium silicon alloys; Impurities; Nanocrystals; Quantum dots; Silicon germanium; Tunneling; Zirconium;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.809036
