Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

Author

Shyi-Ming Pan ; Ru-Chin Tu ; Yu-Mei Fan ; Yeh, R.-C. ; Jung-Tsung Hsu

Author_Institution

Opto-Electron. & Syst. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

15

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

649

Lastpage

651

Abstract

Presents a surface-textured indium-tin-oxide (ITO) transparent ohmic contact layer on p-GaN to increase the optical output of nitride-based light-emitting diodes (LED) without destroying the p-GaN. The surface-textured ITO layer was prepared by lithography and dry etching, and dimensions of the regular pattern were approximately 3 × 3 μm. The operating voltage of the surface-textured LED was almost the same as that of the typical planar LED since the ITO layer was in ohmic contact with the p-GaN. The experimental results indicate that the surface-textured ITO layer is suitable for fabricating high-brightness GaN-based light emitting devices.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; ohmic contacts; photolithography; sputter etching; surface texture; tin compounds; transparency; wide band gap semiconductors; 3 micron; ITO; InGaN-GaN; InGaN-GaN light-emitting diodes; InSnO; dry etching; high-brightness GaN-based light emitting devices; lithography; nitride-based LED; operating voltage; optical output; p-GaN; regular pattern dimensions; surface-textured indium-tin-oxide transparent ohmic contacts; Dry etching; Electrodes; Indium tin oxide; Light emitting diodes; Ohmic contacts; Optical refraction; Rough surfaces; Surface roughness; Surface texture; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.809985

Filename

1196124