Title :
Ultralow loss ring resonators using 3.5% index-contrast Ge-doped silica waveguides
Author :
Bourdon, G. ; Alibert, G. ; Beguin, A. ; Bellman, B. ; Guiot, E.
Author_Institution :
Corning S.A., Avon, France
fDate :
5/1/2003 12:00:00 AM
Abstract :
Ring resonators (RRs) with a round-trip loss below 0.1 dB and a maximum free-spectral range (FSR) of 62.7 GHz were successfully fabricated. Single-mode waveguides of essentially square cross sections (/spl sim/2.6 × 2.8 μm2) were patterned through reactive ion etching on a core layer of high Ge content doped silica deposited using plasma-enhanced chemical vapor deposition; they received a silica overclad. A propagation loss of 0.085 dB/cm was recorded for these waveguides. We strongly believe that our technology makes it possible to fabricate equally ultralow-loss RRs of even smaller bending radius, reaching an FSR of 100 GHz, thus opening the way to the design of filters for wavelength-division-multiplexing systems.
Keywords :
bending; germanium; optical fabrication; optical losses; optical resonators; optical waveguide filters; optical waveguides; plasma CVD; resonator filters; silicon compounds; sputter etching; 0.1 dB; SiO/sub 2/:Ge; bending radius; filter design; high Ge content core layer; index-contrast SiO/sub 2/:Ge waveguides; maximum free-spectral range; optical strip waveguides; plasma-enhanced chemical vapor deposition; propagation loss; reactive ion etching; resonator filters; round-trip loss; silica overclad; single-mode waveguides; square cross sections; ultralow loss ring resonators; waveguide bends; wavelength-division-multiplexing systems; Chemical technology; Chemical vapor deposition; Etching; Filters; Optical ring resonators; Plasma applications; Plasma chemistry; Plasma waves; Propagation losses; Silicon compounds;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.809925
