Title :
10-Gb/s all-silicon optical receiver
Author :
Yang, B. ; Schaub, J.D. ; Csutak, S.M. ; Rogers, D.L. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
fDate :
5/1/2003 12:00:00 AM
Abstract :
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9dBm (bit error ratio <10/sup -9/) at 10 Gb/s was achieved.
Keywords :
CMOS integrated circuits; avalanche photodiodes; frequency response; integrated optoelectronics; lead bonding; optical receivers; p-i-n photodiodes; silicon-on-insulator; 10 Gbit/s; 10-Gb/s all-silicon optical receiver; 130 nm; CMOS compatibility; SOI; avalanche photodiodes; bit error ratio; complementary metal-oxide-semiconductor technology; eye diagram; lateral p-i-n photodiodes; receiver frequency response; sensitivity; silicon-on-insulator substrate; wire bonding; Bandwidth; BiCMOS integrated circuits; CMOS technology; Distributed Bragg reflectors; Optical amplifiers; Optical receivers; Photodiodes; Silicon on insulator technology; Substrates; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.810261
