Title :
A recessed-gap capacitive-gate GaAs CCD
Author :
Colbeth, R.E. ; Song, J.-I. ; Rossi, D.V. ; Fossum, Eric R.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
A MESFET-compatible structure for GaAs capacitive-gate CCDs that eliminates the necessity for submicrometer interelectrode gaps and simplifies device fabrication is presented. This recessed-gap structure solves problems of low gate-channel-gate breakdown and large parasitic gate-to-gate capacitance associated with ultrasmall gaps. Dark current is also reduced. Modeling and experimental results are reported.<>
Keywords :
III-V semiconductors; charge-coupled device circuits; gallium arsenide; semiconductor technology; GaAs; MESFET-compatible structure; breakdown voltage increase; capacitive gate CCD; dark current reduction; device fabrication simplification; experimental results; parasitic capacitance reduction; recessed-gap structure; Charge coupled devices; Clocks; Doping; Electrodes; Fabrication; Gallium arsenide; MESFETs; Photonic band gap; Poisson equations; Potential well;
Journal_Title :
Electron Device Letters, IEEE
