DocumentCode :
1188106
Title :
Transistor Failure Modes in High Power Switching Operation
Author :
Mathews, Joseph W.
Author_Institution :
Advanced Development Laboratory, Consumer Products Division, Philco Corporation, Philadelphia, Pennsylvania.
Issue :
2
fYear :
1962
fDate :
7/1/1962 12:00:00 AM
Firstpage :
35
Lastpage :
39
Abstract :
It is desirable to use power transistors as switches up to their maximum collector-emitter voltage capability (BVcex). In this type operation, failure phenomena during switch-off have been observed and attributed in the literature to second breakdown, punch through, reach through, pinch off, and various types of energy level effects.
Keywords :
Breakdown voltage; Circuits; Consumer products; Energy states; Laboratories; Power engineering and energy; Power transistors; Switches; Switching loss; TV;
fLanguage :
English
Journal_Title :
Broadcast and Television Receivers, IRE Transactions on
Publisher :
ieee
ISSN :
0096-1655
Type :
jour
DOI :
10.1109/TBTR2.1962.4503215
Filename :
4503215
Link To Document :
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