Title :
A selectively contacted dual-channel HEMT
Author :
Khanna, Ravi ; Das, Mukunda B. ; Smith, Doranand D. ; Iafrate, Gerald J. ; Newman, P.G.
Author_Institution :
Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA
Abstract :
A dual-channel high-electron-mobility transistor (HEMT) with selective contacts to each channel is discussed. The conduction properties of each individual channel are obtained using simple DC measurements. Isolation between the channels and the presence of the kink effect are discussed. In addition, inverter-like behavior from a single device is obtained at 77 K.<>
Keywords :
high electron mobility transistors; 77 K; DC measurements; conduction properties; dual-channel HEMT; high-electron-mobility transistor; inverter-like behavior; isolation between channels; kink effect; selective contacts; Annealing; Electrons; Etching; Fabrication; Gallium arsenide; Gold; HEMTs; Laboratories; MODFETs; Ohmic contacts;
Journal_Title :
Electron Device Letters, IEEE
