DocumentCode :
1188361
Title :
Resistive Switching in 
Films for Nonvolatile Memory Application
Author :
Sun, Xiao ; Sun, Bing ; Liu, Lifeng ; Xu, Nuo ; Liu, Xiaoyan ; Han, Ruqi ; Kang, Jinfeng ; Xiong, Guangcheng ; Ma, T.P.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Volume :
30
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
334
Lastpage :
336
Abstract :
Al/CeOx/Pt devices with nonstoichiometric CeOx (1.5<x<2) films were fabricated. The unique resistive switching (RS) behaviors for resistive random access memory applications, including stable and sharp bipolar RS processes and a multilevel and self-stop set process without current compliance and without excessive requirement on a high-voltage electroforming process, were demonstrated. A multifilament switching model based on the distribution characteristics of oxygen vacancies in CeOx films is proposed to explain the observed RS behaviors.
Keywords :
random-access storage; semiconductor storage; switching circuits; Al-CeO-Pt; bipolar resistive switching; high-voltage electroforming process; multifilament switching model; nonstoichiometric films; nonvolatile memory application; oxygen vacancies; resistive random access memory application; self-stop set process; $hbox{CeO}_{x}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2014256
Filename :
4799144
Link To Document :
