Title :
Experimental and finite elemental investigations on residual stress of TSV
Author :
Fei Su ; Tianbao Lan ; Yunhui Zhu ; Jing Chen
Author_Institution :
Inst. of Solid Mech., Beijing Univ. of Aeronaut. & Astronaut., Beijing, China
Abstract :
In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through this investigation, the maximum principal stress and affected area around TSV were determined.
Keywords :
finite element analysis; photoelasticity; stress analysis; three-dimensional integrated circuits; MIPE system; TSV residual stress; finite element method; maximum principal stress; microinfrared photoelasticity system; silicon chip; stress distribution; stress information; Filling; Finite element analysis; Residual stresses; Silicon; Through-silicon vias; Finite element method; Photo-elasticity; Stress; Through Silicon Via (TSV);
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922843
