DocumentCode
118838
Title
Experimental and finite elemental investigations on residual stress of TSV
Author
Fei Su ; Tianbao Lan ; Yunhui Zhu ; Jing Chen
Author_Institution
Inst. of Solid Mech., Beijing Univ. of Aeronaut. & Astronaut., Beijing, China
fYear
2014
fDate
12-15 Aug. 2014
Firstpage
1133
Lastpage
1137
Abstract
In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through this investigation, the maximum principal stress and affected area around TSV were determined.
Keywords
finite element analysis; photoelasticity; stress analysis; three-dimensional integrated circuits; MIPE system; TSV residual stress; finite element method; maximum principal stress; microinfrared photoelasticity system; silicon chip; stress distribution; stress information; Filling; Finite element analysis; Residual stresses; Silicon; Through-silicon vias; Finite element method; Photo-elasticity; Stress; Through Silicon Via (TSV);
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location
Chengdu
Type
conf
DOI
10.1109/ICEPT.2014.6922843
Filename
6922843
Link To Document