Measurement of trapping time constants in proton-irradiated silicon pad detectors

Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2·10¹³ n_eq/cm² and 9·10¹⁴ n_eq/cm². The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60°C, leads to an increased trapping for holes while electron trapping decreases.