Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

Author

Turowski, Marek ; Raman, Ashok ; Schrimpf, R.D.

Author_Institution

CFD Res. Corp., Huntsville, AL, USA

Volume

51

Issue

6

fYear

2004

Firstpage

3166

Lastpage

3171

Abstract

A new approach for modeling the radiation-induced charge distribution in shallow-trench isolation (STI) structures shows that much less charge is trapped near the top of the trench. We found that charges inside the STI oxide are pushed down by the vertical electric field coming from the positive gate bias, leaving much less total-dose-induced charge close to the top of trench. This nonuniformity significantly affects the measured leakage current.

Keywords

MOSFET; isolation technology; leakage currents; radiation effects; semiconductor device measurement; semiconductor device models; MOSFET; nonuniform total-dose-induced charge distribution; positive gate bias; radiation effects; radiation hardening; radiation-induced charge distribution; shallow-trench isolation oxides; shallow-trench isolation structures; subthreshold leakage current; three-dimensional modeling; trapped charge; vertical electric field; CMOS technology; Current measurement; Doping; Isolation technology; Leakage current; MOSFET circuits; Radiation effects; Radiation hardening; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839201

Filename

1369465