• DocumentCode
    1188826
  • Title

    Spatial distribution of electron-hole pairs induced by electrons and protons in SiO2

  • Author

    Murat, M. ; Akkerman, A. ; Barak, J.

  • Author_Institution
    Soreq Nucl. Res. Center, Yavne, Israel
  • Volume
    51
  • Issue
    6
  • fYear
    2004
  • Firstpage
    3211
  • Lastpage
    3218
  • Abstract
    The spatial distribution of electron-hole pairs in SiO2, induced by electrons and protons, was simulated using a new Monte Carlo (MC) code which calculates the full track structure with parameters found using the complex dielectric function theory for electron energies above 50 eV. For electrons below 50 eV, we included interactions with phonons. Track structure calculations were used to find the spatial distribution of the electron-hole pairs. The charge-yield for electrons and protons under electric field has been calculated directly, without using either the columnar or the geminate models for charge recombination. A good agreement is found with experimental charge-yield results.
  • Keywords
    Monte Carlo methods; electron beam effects; electron-hole recombination; electron-phonon interactions; energy loss of particles; particle tracks; proton effects; silicon compounds; Monte Carlo code; Monte Carlo simulation; SiO2; charge recombination; charge-yield; complex dielectric function theory; electron energies; electron-hole pairs; full track structure; geminate models; spatial distribution; stopping power; Charge carrier processes; Dielectrics; Electrons; Ionizing radiation; Monte Carlo methods; Particle tracking; Phonons; Protons; Spontaneous emission; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2004.839148
  • Filename
    1369472