DocumentCode :
1188826
Title :
Spatial distribution of electron-hole pairs induced by electrons and protons in SiO2
Author :
Murat, M. ; Akkerman, A. ; Barak, J.
Author_Institution :
Soreq Nucl. Res. Center, Yavne, Israel
Volume :
51
Issue :
6
fYear :
2004
Firstpage :
3211
Lastpage :
3218
Abstract :
The spatial distribution of electron-hole pairs in SiO2, induced by electrons and protons, was simulated using a new Monte Carlo (MC) code which calculates the full track structure with parameters found using the complex dielectric function theory for electron energies above 50 eV. For electrons below 50 eV, we included interactions with phonons. Track structure calculations were used to find the spatial distribution of the electron-hole pairs. The charge-yield for electrons and protons under electric field has been calculated directly, without using either the columnar or the geminate models for charge recombination. A good agreement is found with experimental charge-yield results.
Keywords :
Monte Carlo methods; electron beam effects; electron-hole recombination; electron-phonon interactions; energy loss of particles; particle tracks; proton effects; silicon compounds; Monte Carlo code; Monte Carlo simulation; SiO2; charge recombination; charge-yield; complex dielectric function theory; electron energies; electron-hole pairs; full track structure; geminate models; spatial distribution; stopping power; Charge carrier processes; Dielectrics; Electrons; Ionizing radiation; Monte Carlo methods; Particle tracking; Phonons; Protons; Spontaneous emission; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2004.839148
Filename :
1369472
Link To Document :
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