DocumentCode
1188826
Title
Spatial distribution of electron-hole pairs induced by electrons and protons in SiO2
Author
Murat, M. ; Akkerman, A. ; Barak, J.
Author_Institution
Soreq Nucl. Res. Center, Yavne, Israel
Volume
51
Issue
6
fYear
2004
Firstpage
3211
Lastpage
3218
Abstract
The spatial distribution of electron-hole pairs in SiO2, induced by electrons and protons, was simulated using a new Monte Carlo (MC) code which calculates the full track structure with parameters found using the complex dielectric function theory for electron energies above 50 eV. For electrons below 50 eV, we included interactions with phonons. Track structure calculations were used to find the spatial distribution of the electron-hole pairs. The charge-yield for electrons and protons under electric field has been calculated directly, without using either the columnar or the geminate models for charge recombination. A good agreement is found with experimental charge-yield results.
Keywords
Monte Carlo methods; electron beam effects; electron-hole recombination; electron-phonon interactions; energy loss of particles; particle tracks; proton effects; silicon compounds; Monte Carlo code; Monte Carlo simulation; SiO2; charge recombination; charge-yield; complex dielectric function theory; electron energies; electron-hole pairs; full track structure; geminate models; spatial distribution; stopping power; Charge carrier processes; Dielectrics; Electrons; Ionizing radiation; Monte Carlo methods; Particle tracking; Phonons; Protons; Spontaneous emission; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.839148
Filename
1369472
Link To Document