DocumentCode
1188834
Title
Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low
Author
Ducret, S. ; Saigné, F. ; Boch, J. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Vaille, J.R. ; Dusseau, L. ; David, J.P. ; Ecoffet, R.
Author_Institution
Univ. de Montpellier, France
Volume
51
Issue
6
fYear
2004
Firstpage
3219
Lastpage
3224
Abstract
The influence of an electrostatic barrier in the oxide bulk on the radiation-induced degradation of bipolar technologies is investigated by performing a thermal annealing operation before switching the dose rate from high to low. It is shown that, in our test conditions, no significant electrostatic barrier effect is at play in the device degradation.
Keywords
annealing; bipolar integrated circuits; bipolar transistors; dosimetry; integrated circuit testing; radiation effects; bipolar integrated circuits; bipolar technologies; electrostatic barrier; enhanced low dose rate sensitivity; high dose rate; oxide bulk; radiation-induced degradation; thermal annealing; Annealing; Electrostatics; Helium; Impedance; Paper technology; Protons; Shape; Switches; Testing; Thermal degradation;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.839145
Filename
1369473
Link To Document