Title :
Charge trapping in irradiated SOI wafers measured by second harmonic generation
Author :
Jun, Bongim ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; White, Yelena V. ; Pasternak, Robert ; Rashkeev, Sergey N. ; Brunier, Francois ; Bresson, Nicolas ; Fouillat, Marion ; Cristoloveanu, Sorin ; Tolk, Norman H.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Abstract :
Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.
Keywords :
MOSFET; interface states; optical harmonic generation; radiation effects; semiconductor device measurement; silicon-on-insulator; SHG intensity; SOI UNI-BOND wafers; Si; charge trapping; electrical methods; interface fields; interface traps; irradiated SOI wafers; optical method; optical second harmonic generation; radiation effects; radiation-induced oxide; Charge measurement; Current measurement; Frequency conversion; Nonlinear optics; Optical films; Optical harmonic generation; Optical refraction; Optical sensors; Signal detection; Silicon on insulator technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839140
