DocumentCode
1188889
Title
Single-Electron Device With Si Nanodot Array and Multiple Input Gates
Author
Kaizawa, Takuya ; Arita, Masashi ; Fujiwara, Akira ; Yamazaki, Kenji ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo ; Choi, Jung-Bum
Author_Institution
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Volume
8
Issue
4
fYear
2009
fDate
7/1/2009 12:00:00 AM
Firstpage
535
Lastpage
541
Abstract
We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.
Keywords
elemental semiconductors; logic gates; nanostructured materials; silicon; silicon-on-insulator; single electron devices; Si; control gate voltage; flexible logic gate; logic functions; multiple input gates; silicon nanodot array; silicon-on-insulator wafer; single electron device; Coulomb blockade; dot array; logic devices; logic functions; quantum dots; silicon; silicon on insulator technology; single electron;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2009.2016338
Filename
4799194
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