• DocumentCode
    1188889
  • Title

    Single-Electron Device With Si Nanodot Array and Multiple Input Gates

  • Author

    Kaizawa, Takuya ; Arita, Masashi ; Fujiwara, Akira ; Yamazaki, Kenji ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo ; Choi, Jung-Bum

  • Author_Institution
    Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
  • Volume
    8
  • Issue
    4
  • fYear
    2009
  • fDate
    7/1/2009 12:00:00 AM
  • Firstpage
    535
  • Lastpage
    541
  • Abstract
    We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.
  • Keywords
    elemental semiconductors; logic gates; nanostructured materials; silicon; silicon-on-insulator; single electron devices; Si; control gate voltage; flexible logic gate; logic functions; multiple input gates; silicon nanodot array; silicon-on-insulator wafer; single electron device; Coulomb blockade; dot array; logic devices; logic functions; quantum dots; silicon; silicon on insulator technology; single electron;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2009.2016338
  • Filename
    4799194