Title :
New experimental findings for single-event gate rupture in MOS capacitors and linear devices
Author :
Lum, Gary K. ; Boruta, Nicholas ; Baker, J.M. ; Robinette, L. ; Shaneyfelt, M.R. ; Schwank, J.R. ; Dodd, P.E. ; Felix, J.A.
Author_Institution :
Lockheed-Martin Space Syst. Co., Sunnyvale, CA, USA
Abstract :
Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs ) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing dose. The number of SEGR strikes across a MOS capacitor was measured, and the SEGR response cross section distinctly shows an electric field threshold. The importance of having stiffening and speedup capacitors at the device is discussed.
Keywords :
MOS capacitors; doping profiles; electric fields; fracture; integrated circuits; ion beam effects; MOS capacitors; SEGR response cross section; bias polarity; catastrophic gate oxide failure; dielectric gate rupture; doping concentration; electric field threshold; ion energies; ionizing dose; linear devices; linear integrated circuits; oxide defects; single-event gate rupture; speedup capacitors; stiffening capacitors; Analog integrated circuits; Dielectric devices; Dielectric measurements; Doping; Electric variables measurement; Integrated circuit measurements; Laboratories; MOS capacitors; MOSFETs; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.840262
