Title :
Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAM
Author :
Buchner, Stephen ; Campbell, Arthur ; Reed, Robert ; Fodness, Bryan ; Kuboyama, Satoshi
Author_Institution :
QSS Group Inc., Seabrook, MD, USA
Abstract :
The number of double-bit upsets induced by protons in a 16 Mb DRAM was found to increase with angle of incidence. The increase was greater for intermediate energy (63 MeV) protons than for high-energy (198 MeV) protons. An explanation is offered and the results of a calculation using the CUPID program agree with the observations.
Keywords :
DRAM chips; physics computing; proton effects; 16 Mbit DRAM; CUPID program; SEU; angle of incidence; angular dependence; double-bit upsets; high-energy protons; intermediate energy protons; linear energy transfer; multiple-bit upsets; single event upset; Anisotropic magnetoresistance; Circuits; Energy exchange; Energy measurement; Particle measurements; Protons; Random access memory; Scattering; Silicon; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839169
