Title :
Hydrodynamic simulation of semiconductor devices operating at low temperature
Author :
Leone, Alberto ; Gnudi, Antonio ; Baccarani, Giorgio
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
fDate :
11/1/1994 12:00:00 AM
Abstract :
The problems related to the hydrodynamic simulation of semiconductor devices operating at liquid nitrogen temperature are investigated, with emphasis on the numerical aspects. A discretization strategy is proposed that allows one to incorporate in a conventional hydrodynamic program typical low-temperature effects, such as Fermi statistics and incomplete ionization, as well as proper boundary conditions. The suggested technique has been implemented in the hydrodynamic version of the program HFIELDS, and it has been tested by means of the simulation of a submicron n-channel MOSFET
Keywords :
cryogenics; digital simulation; electronic engineering computing; semiconductor device models; Fermi statistics; HFIELDS; boundary conditions; discretization strategy; hydrodynamic simulation; incomplete ionization; liquid nitrogen temperature; low temperature operation; semiconductor devices; submicron n-channel MOSFET; Charge carrier processes; Electric potential; Electrons; Hydrodynamics; Ionization; MOSFET circuits; Semiconductor devices; Statistics; Temperature; Thermal conductivity;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
