Title :
Transient response of III-V field-effect transistors to heavy-ion irradiation
Author :
McMorrow, Dale ; Boos, J. Brad ; Knudson, Alvin R. ; Lotshaw, William T. ; Park, Doe ; Melinger, Joseph S. ; Bennett, Brian R. ; Torres, Alphonse ; Ferlet-Cavrois, Veronique ; Sauvestre, Jean-Etienne ; D´hose, C. ; Flament, Olivier
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The single-event effects response of three different III-V field-effect transistor technologies (GaAs MESFET, InAlAs/InGaAs HEMT, and AlSb/InAs HEMT) is measured for MeV and GeV heavy-ion irradiation. These measurements reveal significant charge enhancement and very slow, microsecond-timescale relaxation times for the GaAs and InAlAs/InGaAs devices, with a much faster recovery from the ionizing event observed for the AlSb/InAs HEMTs.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ion beam effects; transient response; AlSb-InAs; AlSb/InAs HEMT; GaAs; GaAs MESFET; GeV heavy-ion irradiation; III-V field-effect transistors; InAlAs-InGaAs; InAlAs/InGaAs HEMT; MeV heavy-ion irradiation; charge collection; ionizing event; microsecond-timescale relaxation times; single-event effects response; single-event transient; single-event upset; transient response; Charge measurement; Current measurement; FETs; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium compounds; Indium gallium arsenide; MESFETs; Transient response;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839529
