Title :
Single-event burnout of Super-junction power MOSFETs
Author :
Ikeda, Naomi ; Kuboyama, Satoshi ; Matsuda, Sumio
Author_Institution :
Japan Aerosp. Exploration Agency, Tsukuba, Japan
Abstract :
The experimental results of single-event burnout (SEB) of super-junction power MOSFETs are reported for the first time in comparison with those of standard MOSFETs. Similar tendencies were observed from both results. While a super-junction MOSFET (SJ-MOSFET) has an attractive electrical performance such as low on-resistance and high breakdown voltage, the experiment demonstrated that there was no structural advantage in SEB tolerance.
Keywords :
ion beam effects; junction gate field effect transistors; power MOSFET; transients; angular irradiation; electrical performance; energetic particle induced charge spectroscopy spectra; high breakdown voltage; low on-resistance; single-event burnout; structural advantage; super-junction power MOSFET; Bipolar transistors; Current measurement; Doping; Immune system; MOSFETs; Manufacturing; Power generation; Power transistors; Spectroscopy; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839511
