DocumentCode
1189009
Title
Single-event burnout of Super-junction power MOSFETs
Author
Ikeda, Naomi ; Kuboyama, Satoshi ; Matsuda, Sumio
Author_Institution
Japan Aerosp. Exploration Agency, Tsukuba, Japan
Volume
51
Issue
6
fYear
2004
Firstpage
3332
Lastpage
3335
Abstract
The experimental results of single-event burnout (SEB) of super-junction power MOSFETs are reported for the first time in comparison with those of standard MOSFETs. Similar tendencies were observed from both results. While a super-junction MOSFET (SJ-MOSFET) has an attractive electrical performance such as low on-resistance and high breakdown voltage, the experiment demonstrated that there was no structural advantage in SEB tolerance.
Keywords
ion beam effects; junction gate field effect transistors; power MOSFET; transients; angular irradiation; electrical performance; energetic particle induced charge spectroscopy spectra; high breakdown voltage; low on-resistance; single-event burnout; structural advantage; super-junction power MOSFET; Bipolar transistors; Current measurement; Doping; Immune system; MOSFETs; Manufacturing; Power generation; Power transistors; Spectroscopy; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.839511
Filename
1369490
Link To Document