Title :
SEMM-2: a modeling system for single event upset analysis
Author :
Tang, Henry H K ; Cannon, Ethan H.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We describe SEMM-2, a new simulation system for the analysis of radiation-induced single event upsets which builds on the initial SEMM tool. Developed for the current and future CMOS technologies, SEMM-2 improves the generation of radiation events. The atomic databases which describe ion energy loss with transport through device materials are generalized. Enhancements of the nuclear collision event generation include more accurate and efficient methods for generating elastic events and more thorough treatment of inelastic processes. We present illustrative simulations where more accurately accounting for the metallization layers significantly impacts the simulated single event failure rate.
Keywords :
CMOS integrated circuits; alpha-particle effects; cosmic rays; neutron effects; proton effects; semiconductor device models; CMOS technologies; SEMM-2; alpha particle-induced radiation; atomic databases; cosmic ray-induced radiation; elastic events; heavy ion-induced radiation; high-energy hadron-induced radiation; inelastic process; ion energy loss; metallization layers; microelectronics; neutron-induced radiation; nuclear collision event generation; particle-induced soft errors; proton-induced radiation; radiation effects; radiation effects modeling methodology; radiation-induced single event upset analysis; reliability; simulated single event failure rate; single event upsets; stability; Analytical models; Atomic layer deposition; Atomic measurements; CMOS technology; Databases; Discrete event simulation; Energy loss; Nuclear power generation; Semiconductor device modeling; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839507
