DocumentCode :
1189031
Title :
Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg 
Implanted Current Blocking Layer
Author :
Tsai, Min-An ; Yu, Peichen ; Chen, J.R. ; Huang, J.K. ; Chiu, C.H. ; Kuo, H.C. ; Lu, T.C. ; Lin, S.H. ; Wang, S.C.
Author_Institution :
Dept. of Electrophys., Nat. Chiao-Tung Univ., Hsinchu
Volume :
21
Issue :
11
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
688
Lastpage :
690
Abstract :
A method for forming a current blocking layer (CBL) by ion implantation in GaN-based vertical-injection light-emitting diodes (VI-LEDs) was proposed. It was found that the use of CBL in VI-LEDs can effectively reduce the current crowding effect and enhance the light output power. The uniform emission intensity distribution of VI-LEDs with CBL was demonstrated by electroluminescence measurements. Experimental results show that the wall-plug efficiency was enhanced by 12.3% at an injection current of 20 mA, compared to that of VI-LEDs without CBL, and by 56.2% compared to that of conventional LEDs. The device simulation results reveal that the current path can be blocked by CBL, resulting in high light extraction efficiencies and large current densities within the effective emission region of active layers.
Keywords :
current density; electroluminescence; gallium compounds; ion implantation; light emitting diodes; semiconductor device models; semiconductor doping; wide band gap semiconductors; GaN; GaN-based vertical-injection light-emitting diodes; Mg+ implantation; current 20 mA; current blocking layer; current density; electroluminescence; light extraction efficiency; light output power; wall-plug efficiency; Current blocking layer (CBL); GaN; current crowding; ion implantation; vertical-injection light-emitting diodes (VI-LEDs); wall-plug efficiency (WPE);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2016431
Filename :
4799209
Link To Document :
