Title :
Analysis of proton/neutron SEU sensitivity of commercial SRAMs-application to the terrestrial environment test method
Author :
Baggio, J. ; Ferlet-Cavrois, V. ; Duarte, H. ; Flament, O.
Author_Institution :
CEA DAM-Ile de France, Bruyeres-le-Chatel, France
Abstract :
Results of WNR continuous spectrum irradiations are compared to mono-energetic proton and neutron data according to the JEDEC-JESD89 test procedure. A good correlation between these two methods is found particularly when 500 MeV proton cross-section is used instead of the one at 150 MeV. The increased contribution of the low energy part of the spectrum for modern devices is also discussed. Finally, the influence of front side and back side irradiations is studied at different energies and for several devices from 0.8 μm to 0.18 μm technologies.
Keywords :
SRAM chips; neutron effects; proton effects; 0.8 to 0.18 micron; JEDEC-JESD89 test procedure; WNR continuous spectrum irradiations; back side irradiation; bulk technologies; commercial SRAMs; front side irradiation; low energy part; modern devices; monoenergetic neutron; monoenergetic proton; neutron effects; proton cross-section; proton effects; proton/neutron SEU sensitivity; single-event upset; soft error rate; terrestrial environment test method; Energy measurement; Error analysis; Life estimation; Manufacturing; Neurons; Neutrons; Particle beams; Proton effects; Single event upset; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839135
