Author :
Marshall, Paul ; Carts, Marty ; Campbell, Art ; Ladbury, Ray ; Reed, Robert ; Marshall, Cheryl ; Currie, Steve ; McMorrow, Dale ; Buchner, Steve ; Seidleck, Christina ; Riggs, Pam ; Fritz, Karl ; Randall, Barb ; Gilbert, Barry
Abstract :
We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of both data paths and clock distribution circuitry.
Keywords :
BiCMOS logic circuits; Ge-Si alloys; ion beam effects; proton effects; IBM 5 AM process; IBM 7 HP process; Jazz Semiconductors SiGe120 process; SEE data; SEU; clock distribution circuitry; complex burst-error modes; data paths; data rates; ground testing; heavy-ion induced bit-error sensitivity; high-speed SiGe BiCMOS; high-speed testing; particle LET; proton-induced bit-error sensitivity; pulsed laser probing; silicon germanium; single-event effect; single-event upset; BiCMOS integrated circuits; CMOS technology; Circuit testing; Germanium silicon alloys; Heterojunction bipolar transistors; NASA; Protons; Pulse width modulation; Silicon germanium; Substrates;
