Proton-induced upset in SOI CMOS SRAMS

Author

Liu, S.T. ; Liu, H.Y. ; Anthony, D. ; Heikkila, W. ; Hughes, H. ; Campbell, A. ; Petersen, E.L. ; McMarr, P.J.

Author_Institution

Honeywell Defense & Space Electron. Syst., Plymouth, MN, USA

Volume

51

Issue

6

fYear

2004

Firstpage

3475

Lastpage

3479

Abstract

The results of proton-induced single-event upset (SEU) measurements on radiation hard silicon-on-insulator (SOI) CMOS SRAMS are discussed and compared with a generalized figure-of-merit (FOM) prediction. Fairly large differences between the measured upset cross section and the cross section predicted by the FOM prediction were observed. The measured upset cross section is explained with a double-node hit model. Calculated double-node hit model cross sections compare well with measured data for SOI 1- and 4-Mb SRAMS.

Keywords

CMOS memory circuits; SRAM chips; proton effects; silicon-on-insulator; SEU measurements; SOI 1-Mb SRAM; SOI 4-Mb SRAM; double-node hit model cross sections; generalized figure-of-merit prediction; proton-induced single-event upset; radiation hard silicon-on-insulator CMOS SRAMS; total dose radiation hardness; upset cross section; Delay; Helium; MOSFET circuits; Predictive models; Protons; Random access memory; Semiconductor device modeling; Silicon on insulator technology; Single event upset; Switches;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839175

Filename

1369513