Title :
Use of light-ion-induced SEU in devices under reduced bias to evaluate their SEU cross section
Author :
Barak, J. ; Haran, A. ; Adler, E. ; Azoulay, M. ; Levinson, J. ; Zentner, A. ; David, D. ; Fischer, B.E. ; Heiss, M. ; Betel, D.
Author_Institution :
Soreq Nucl. Res. Center, Yavne, Israel
Abstract :
Single-event upset (SEU) cross section was measured for several devices under reduced bias with light ions, in particular α-particles. The results show that α-particles can be used, in a simple manner, for testing devices in order to save accelerator time. A proportionality law was found for scaling the reduced bias results to normal operation bias.
Keywords :
SRAM chips; alpha-particle effects; ion beam effects; semiconductor device testing; SEU cross section; SRAMs; accelerator time; alpha-particles; device testing; light-ion-induced SEU; normal operation bias; proportionality law; reduced bias scaling; single-event upset; Energy exchange; Extraterrestrial measurements; Ion accelerators; Life estimation; Orbital calculations; Particle measurements; Shape measurement; Single event upset; Testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839171
