DocumentCode :
1189281
Title :
Extensions of the FOM Method-proton SEL and atmospheric neutron SEU
Author :
Normand, E.
Author_Institution :
Boeing Radiat. Effects Lab., Seattle, WA, USA
Volume :
51
Issue :
6
fYear :
2004
Firstpage :
3494
Lastpage :
3504
Abstract :
The figure of merit (FOM) method developed by Petersen (1998) is extended in two different directions, to single-event latchup (SEL) by protons and to single-event upset (SEU) by atmospheric neutrons. In applying the FOM method to latchup, 30 different CMOS devices are examined, all with heavy ion SEL data, which are grouped into three categories based on whether they were tested with high energy protons/neutrons, and whether the protons also caused SEL. The plot of FOM as a function of the limiting proton SEL cross section leads to an empirically derived FOM value that serves as a screening criterion for whether devices with heavy ion SEL data are likely to be susceptible to proton SEL. By applying Petersen´s method to SEU from atmospheric neutrons, a simple relationship is derived for the SEU rate from these neutrons, and the variation of this rate with altitude and latitude is given.
Keywords :
CMOS integrated circuits; Weibull distribution; avionics; neutron effects; proton effects; CMOS devices; Petersen method; Weibull distribution; atmospheric neutrons; avionics SEU; figure of merit method; heavy ion single-event latchup data; high energy neutrons; high energy protons; proton single-event latchup; single-event upset; Aerospace electronics; Cosmic rays; Neutrons; Protons; Radiation effects; Single event upset; Testing; Weibull distribution;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2004.839170
Filename :
1369516
Link To Document :
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