DocumentCode
1189310
Title
Analysis of single-event effects in continuous-time Delta-Sigma Modulators
Author
Leuciuc, Adrian ; Zhao, Bing ; Tian, Yi ; Sun, Jinhu
Author_Institution
Dept. of Electr. & Comput. Eng., Stony Brook Univ., NY, USA
Volume
51
Issue
6
fYear
2004
Firstpage
3519
Lastpage
3524
Abstract
Behavioral simulations are carried out for characterizing single-event effects in continuous-time Delta-Sigma modulators, the core subsystem of an oversampling analog-to-digital converter. The performed study shows that some topologies are less immune than others to single-event hits and that by appropriately choosing the order and oversampling ratio of the modulators one can reduce the radiation effects.
Keywords
CMOS digital integrated circuits; analogue-digital conversion; delta-sigma modulation; radiation effects; semiconductor device models; silicon-on-insulator; Si-SiO2; analog-to-digital converters; behavioral simulations; continuous-time Delta-Sigma modulators; core subsystem; radiation effects; silicon-on-insulator complementary metal-oxide semiconductor circuit; single-event effects; topology; Analog-digital conversion; Circuit simulation; Circuit topology; Delta modulation; Digital filters; Predictive models; Signal processing; Signal resolution; Space technology; Sun;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.839109
Filename
1369519
Link To Document