Title :
A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices
Author :
Doghish, Mohamed Yehya ; Ho, Fat Duen
Author_Institution :
Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
A comprehensive model for metal-insulator-semiconductor (MIS) devices under dark conditions which consists of a wide range of parameters has been developed. Parameters neglected by other authors have been included. The effects of surface states, silicon dioxide thickness, substrate doping, fixed oxide charges, substrate thickness, and metal work function are taken into account. The permittivity and barrier height of thin oxide are included in the calculation. The limits on equilibrium and nonequilibrium are explored
Keywords :
metal-insulator-semiconductor devices; permittivity; semiconductor device models; surface electron states; MIS devices; SiO2 thickness; analytical model; barrier height; dark conditions; fixed oxide charges; metal work function; permittivity; substrate doping; substrate thickness; surface states; thin oxide; Analytical models; Charge carrier processes; Doping; Electrons; Insulation; Metal-insulator structures; Permittivity; Semiconductor process modeling; Substrates; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
