Proton damage in LEDs with wavelengths above the silicon wavelength cutoff

Author

Becker, Heidi N. ; Johnston, Allan H.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

51

Issue

6

fYear

2004

Firstpage

3558

Lastpage

3563

Abstract

Proton damage is investigated for LEDs with wavelengths of 1050 and 1550 nm. The results are compared to results for an advanced AlGaAs double heterojunction LED. Unlike the AlGaAs LED, light output degradation for the long wavelength LEDs became nonlinear with current after irradiation; more degradation was observed at lower forward currents. Minimal annealing was observed in the long wavelength LEDs during forward current injection. Mechanisms are proposed that are related to the material properties.

Keywords

III-V semiconductors; aluminium compounds; annealing; gallium arsenide; indium compounds; light emitting diodes; proton effects; semiconductor heterojunctions; 1050 nm; 1550 nm; AlGaAs; AlGaAs double heterojunction LED; InGaAs; InGaAsP; forward current injection; light output degradation; material properties; minimal annealing; proton damage; radiation effect; Annealing; Current measurement; Degradation; Forward contracts; Indium gallium arsenide; Light emitting diodes; Protons; Silicon; Testing; Wavelength measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839168

Filename

1369525