DocumentCode :
1189408
Title :
Analyses of images of neutron interactions and single particle displacement damage in CCD arrays
Author :
Chugg, A.M. ; Jones, R. ; Moutrie, M.J. ; Truscott, P.R.
Author_Institution :
Radiat. Effects Group, MBDA UK Ltd., Bristol, UK
Volume :
51
Issue :
6
fYear :
2004
Firstpage :
3579
Lastpage :
3584
Abstract :
The purpose of this work is to understand the interaction of high energy neutrons with CCDs with the aim of deploying them in flight experiments to gather a database of atmospheric neutron interaction events in silicon cells. The new results in this paper include: 1) early-time multilevel RTS signals from dark current spikes, which have never been resolved before and 2) improved resolution of the frequency distributions of event intensity and comparison with results from a radiation transport code. This work adds to the state of the art by providing a novel perspective on the formation and evolution (annealing) of displacement damage complexes in silicon and by demonstrating that CCDs can provide an attractive combination of spatial and intensity resolution for the interaction events of neutrons and other particles within silicon cells.
Keywords :
annealing; charge-coupled device circuits; neutron effects; particle tracks; reviews; APS; CCD arrays; GEANT4; annealing; atmospheric neutron interaction; charge collection efficiency; dark current spikes; flight experiments; frequency distributions; high energy neutron interactions; image analysis; intensity resolution; multilevel random telegraph signal; particle tracks; radiation transport code; reviews; silicon cells; single particle displacement damage; spatial resolution; transient events; Annealing; Charge coupled devices; Dark current; Energy resolution; Frequency; Image analysis; Image databases; Neutrons; Signal resolution; Silicon;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2004.839164
Filename :
1369528
Link To Document :
بازگشت