Title :
Reliability enhancement in high-performance MOSFETs by annular transistor design
Author :
Mayer, Donald C. ; Lacoe, Ronald C. ; King, Everett E. ; Osborn, Jon V.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
The use of annular MOSFET design, which has demonstrated total-dose radiation immunity in CMOS circuits, can improve the hot-carrier reliability of CMOS circuits by reducing the drain electric field compared to conventionally designed MOSFETs. A theoretical analysis of the annular n-MOSFET in saturation verifies the reduction of the drain electric field in properly designed MOSFETs. Hot-carrier data for an enclosed 0.25-μm n-MOSFET demonstrate an improvement in hot-carrier lifetime by more than 3x compared to a conventional device in the same technology.
Keywords :
CMOS integrated circuits; MOSFET circuits; hot carriers; radiation hardening (electronics); semiconductor device reliability; 0.25 micron; CMOS circuits; annular MOSFET design; annular transistor design; conventional device; conventionally designed MOSFETs; drain electric field; edgeless MOSFET; enclosed MOSFET; hardening MOSFET; high-performance MOSFETs; hot-carrier lifetime; hot-carrier reliability; total-dose radiation immunity; CMOS technology; Helium; Hot carriers; MOSFET circuits; Poisson equations; Power generation; Power supplies; Space technology; Throughput; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839157
