Title :
Proton, neutron, and gamma degradation of optocouplers
Author :
Gorelick, Jerry L. ; Ladbury, Raymond
Author_Institution :
Boeing Satellite Syst., Los Angeles, CA, USA
Abstract :
Optocouplers from two different suppliers were subjected to proton, neutron, and gamma irradiations. A simple transistor model was used to compare degradation in current transfer ratio (CTR) from the three types of radiation. The model was used to determine how accurately proton damage can be predicted from separate neutron and gamma exposures.
Keywords :
gamma-ray effects; neutron effects; opto-isolators; proton effects; transistors; combined ionization; current transfer ratio; displacement damage; gamma degradation; gamma exposures; gamma irradiation; neutron degradation; neutron exposures; neutron irradiation; optocouplers; proton damage; proton degradation; proton irradiation; radiation effects; transistor model; Circuits; Degradation; Ionization; Light emitting diodes; Neutrons; Photodiodes; Predictive models; Protons; Radiation effects; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839249
