DocumentCode
1189636
Title
Compositional dependence of magnetoresistance in TbFeCo amorphous film
Author
Rahman, M.Tofizur ; Liu, Xiaoxi ; Matsumoto, Mitsunori ; Morisako, Akimitsu
Author_Institution
Dept. of Inf. Eng., Shinshu Univ., Nagano, Japan
Volume
41
Issue
10
fYear
2005
Firstpage
2568
Lastpage
2570
Abstract
The dependence of Tb and Co concentration on the magnetoresistance (MR) of TbFeCo amorphous films with perpendicular magnetic anisotropy have been studied at room temperature. TbxFe(88-x-y)Coy films (where x=15--37 at% and y=5--25 at%) with thickness of 200 nm are deposited by dc-magnetron sputtering. The MR ratio is sensitively dependent on the Tb concentration. The MR ratio is increased up to about 2.8% for a Tb concentration of about 22.4 at% then decreased for more Tb content. No significant effect of Co concentration on the MR ratio has been observed. The relation between MR ratio and film composition can be ascribed to the dependence of the domain wall width on the film concentration. The domain wall width decreases with an increase in Tb concentration and again increases for more Tb content showing its minimum value at about 22.4 at % of Tb concentration. It may be considered that the observed MR is contributed from the domain wall.
Keywords
amorphous magnetic materials; magnetic anisotropy; magnetic domain walls; magnetic thin films; magnetoresistance; sputter deposition; terbium alloys; 200 nm; MR ratio; Tb concentration; TbFeCo; amorphous film; dc-magnetron sputtering; domain wall width; film concentration; magnetic anisotropy; magnetoresistance; Amorphous magnetic materials; Amorphous materials; Iron; Magnetic domain walls; Magnetic domains; Magnetic films; Magnetic materials; Magnetic properties; Magnetoresistance; Perpendicular magnetic recording; Domain wall width; TbFeCo film; magnetoresistance (MR) perpendicular anisotropy;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2005.854664
Filename
1519050
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