• DocumentCode
    1189636
  • Title

    Compositional dependence of magnetoresistance in TbFeCo amorphous film

  • Author

    Rahman, M.Tofizur ; Liu, Xiaoxi ; Matsumoto, Mitsunori ; Morisako, Akimitsu

  • Author_Institution
    Dept. of Inf. Eng., Shinshu Univ., Nagano, Japan
  • Volume
    41
  • Issue
    10
  • fYear
    2005
  • Firstpage
    2568
  • Lastpage
    2570
  • Abstract
    The dependence of Tb and Co concentration on the magnetoresistance (MR) of TbFeCo amorphous films with perpendicular magnetic anisotropy have been studied at room temperature. TbxFe(88-x-y)Coy films (where x=15--37 at% and y=5--25 at%) with thickness of 200 nm are deposited by dc-magnetron sputtering. The MR ratio is sensitively dependent on the Tb concentration. The MR ratio is increased up to about 2.8% for a Tb concentration of about 22.4 at% then decreased for more Tb content. No significant effect of Co concentration on the MR ratio has been observed. The relation between MR ratio and film composition can be ascribed to the dependence of the domain wall width on the film concentration. The domain wall width decreases with an increase in Tb concentration and again increases for more Tb content showing its minimum value at about 22.4 at % of Tb concentration. It may be considered that the observed MR is contributed from the domain wall.
  • Keywords
    amorphous magnetic materials; magnetic anisotropy; magnetic domain walls; magnetic thin films; magnetoresistance; sputter deposition; terbium alloys; 200 nm; MR ratio; Tb concentration; TbFeCo; amorphous film; dc-magnetron sputtering; domain wall width; film concentration; magnetic anisotropy; magnetoresistance; Amorphous magnetic materials; Amorphous materials; Iron; Magnetic domain walls; Magnetic domains; Magnetic films; Magnetic materials; Magnetic properties; Magnetoresistance; Perpendicular magnetic recording; Domain wall width; TbFeCo film; magnetoresistance (MR) perpendicular anisotropy;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2005.854664
  • Filename
    1519050