Total dose effects on double gate fully depleted SOI MOSFETs

Author

Jun, Bongim ; Xiong, Hao D. ; Sternberg, Andrew L. ; Cirba, Claude R. ; Chen, Dakai ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Schwank, James R. ; Cristoloveanu, Sorin

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

Volume

51

Issue

6

fYear

2004

Firstpage

3767

Lastpage

3772

Abstract

Total ionizing dose effects on fully-depleted (FD) silicon-on-insulator (SOI) transistors are studied when the devices are operated in single gate (SG) and double gate (DG) mode. The devices exhibit superiority in mobility and drain current when operated in DG mode compared to SG mode. Moreover, the dc characteristics of DG operated device are less vulnerable to total dose radiation induced damage. In particular, radiation-induced interface traps have less electrical effect in DG mode operation.

Keywords

MOSFET; X-ray effects; dosimetry; interface states; silicon-on-insulator; X-ray irradiation; charge coupling; dc characteristics; double gate fully depleted SOI MOSFET; double gate mode operation; drain current; electrical effect; fully-depleted silicon-on-insulator transistors; mobility; radiation induced damage; radiation-induced interface traps; single gate mode operation; total ionizing dose effects; Degradation; Energy consumption; FETs; Laboratories; MOSFET circuits; National security; Performance evaluation; Silicon on insulator technology; Transconductance; X-rays;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.839256

Filename

1369556