Title :
Total dose effects on double gate fully depleted SOI MOSFETs
Author :
Jun, Bongim ; Xiong, Hao D. ; Sternberg, Andrew L. ; Cirba, Claude R. ; Chen, Dakai ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Schwank, James R. ; Cristoloveanu, Sorin
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Abstract :
Total ionizing dose effects on fully-depleted (FD) silicon-on-insulator (SOI) transistors are studied when the devices are operated in single gate (SG) and double gate (DG) mode. The devices exhibit superiority in mobility and drain current when operated in DG mode compared to SG mode. Moreover, the dc characteristics of DG operated device are less vulnerable to total dose radiation induced damage. In particular, radiation-induced interface traps have less electrical effect in DG mode operation.
Keywords :
MOSFET; X-ray effects; dosimetry; interface states; silicon-on-insulator; X-ray irradiation; charge coupling; dc characteristics; double gate fully depleted SOI MOSFET; double gate mode operation; drain current; electrical effect; fully-depleted silicon-on-insulator transistors; mobility; radiation induced damage; radiation-induced interface traps; single gate mode operation; total ionizing dose effects; Degradation; Energy consumption; FETs; Laboratories; MOSFET circuits; National security; Performance evaluation; Silicon on insulator technology; Transconductance; X-rays;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839256
