Title :
The effects of proton irradiation on the performance of mm-wave transmission lines implemented in SiGe technology
Author :
Andrews, Joel ; Morton, Matt ; Lee, Jongsoo ; Papapolymerou, John ; Cressler, John D. ; Sutton, Akil K. ; Haugerud, Becca M. ; Marshall, Paul W. ; Reed, Robert A. ; Cho, Daehyung
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper examines, for the first time, the effects of radiation on transmission lines implemented in a commercial SiGe heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) technology. Two different types of mm-wave transmission lines were designed, fabricated, and measured up to 110 GHz, and irradiated with 63.3 MeV protons to fluences as high as 5×1013 p/cm2. The results demonstrate that radiation-induced changes are minimal in such lines, making them potentially suitable for use in space-based SiGe monolithic mm-wave communications systems.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; coplanar waveguides; heterojunction bipolar transistors; microstrip lines; millimetre wave bipolar transistors; proton effects; space communication links; thin film devices; transmission lines; BiCMOS; CPW; HBT; SiGe; SiGe heterojunction bipolar transistor; TFMS; bipolar complementary metal oxide semiconductor; coplanar waveguide; mm-wave transmission line design; mm-wave transmission line fabrication; proton irradiation effects; radiation-induced changes; space-based SiGe monolithic mm-wave communications systems; thin film microstrip; BiCMOS integrated circuits; Dielectric thin films; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Paper technology; Protons; Silicon germanium; Space technology; Transmission lines;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839192
