DocumentCode
1189771
Title
High total dose tolerance of prototype silicon nanocrystal non-volatile memory cells
Author
Petkov, Mihail P. ; Bell, L. Douglas ; Atwater, Harry A.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
51
Issue
6
fYear
2004
Firstpage
3822
Lastpage
3826
Abstract
We report the first results pertinent to the high total dose tolerance of Si nanocrystal nonvolatile memory cells. The studied prototype nc-Si field effect transistors made by ion implantation retained virtually unchanged write/erase characteristics, typical for the two-state devices, to cumulative doses exceeding 15Mrad(Si).
Keywords
dosimetry; field effect transistors; ion implantation; nanostructured materials; random-access storage; silicon; Si; high total dose tolerance; ion implantation; prototype nc-Si field effect transistors; prototype silicon nanocrystal nonvolatile memory cells; two-state devices; unchanged write/erase characteristics; Aerosols; CMOS technology; Ferroelectric films; Laboratories; Nanocrystals; Nonvolatile memory; Prototypes; Random access memory; Silicon; Space technology;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.839141
Filename
1369565
Link To Document