Magnetization switching by spin-polarized current in low-resistance magnetic tunnel junction with MgO [001] barrier

Author

Kubota, H. ; Fukushima, A. ; Ootani, Y. ; Yuasa, S. ; Ando, K. ; Maehara, H. ; Tsunekawa, K. ; Djayaprawira, D.D. ; Watanabe, N. ; Suzuki, Y.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Japan

Volume

41

Issue

10

fYear

2005

Firstpage

2633

Lastpage

2635

Abstract

Current-induced magnetization switching (CIMS) was demonstrated in low resistance magnetic tunnel junctions (MTJs) with thin MgO [001] barrier. The resistance change by CIMS was more than 100%, which is much larger than the previous report in Al-O based MTJs. The switching current density was about 2×10⁷ A/cm², which was comparable with that reported values in metallic multilayers.

Keywords

magnesium alloys; magnetic tunnelling; magnetisation reversal; spin polarised transport; CIMS; MTJ; MgO; MgO barrier; current density; current-induced magnetization switching; magnesium oxide; magnetic devices; magnetic films; magnetic memory; magnetic tunnel junction; magnetization reversal; metallic multilayers; spin-polarized current; Computer integrated manufacturing; Giant magnetoresistance; Iron; Lithography; Magnetic switching; Magnetic tunneling; Magnetization; Optical films; Pulse measurements; Tunneling magnetoresistance; Magnesium oxide; magnetic devices; magnetic films; magnetic memories; magnetization reversal; torque; tunneling;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2005.854816

Filename

1519071