Title :
Asymmetry of the effective bit addressing times in ultrafast MRAM write operation
Author :
Schumacher, H.W. ; Chappert, C. ; Sousa, R.C. ; Freitas, P.P.
Author_Institution :
Phys.-Technische Bundesanstalt, Braunschweig, Germany
Abstract :
We study the effective bit addressing times for ultrafast precessional magnetization reversal in magnetic random access memory (MRAM) cells. During field application to an addressed memory cell two different relative field orientations can occur. Either the applied field has a parallel or an antiparallel easy-axis component with respect to the initial cell magnetization. In this work the time dependence of the magnetization motion in these two cases is studied using time-resolved magnetotransport on microscopic magnetic tunnel junction cells. The two cases show a considerably different time evolution. A strong asymmetry of the effective bit addressing times depending on the relative field orientation is found. Implications for fast MRAM operation are discussed.
Keywords :
magnetic storage; magnetisation reversal; random-access storage; tunnelling magnetoresistance; MRAM cells; bit addressing time; cell magnetization; magnetic random access memory; magnetic tunnel junction cells; magnetization dynamics; magnetization motion; magnetization reversal; time-resolved magnetotransport; tunneling magnetoresistance; ultrafast MRAM; write operation; Magnetic field measurement; Magnetic fields; Magnetic force microscopy; Magnetic tunneling; Magnetization reversal; Pulse generation; Random access memory; Semiconductor device measurement; Semiconductor memory; Tunneling magnetoresistance; Magnetic random access memory (MRAM); magnetization dynamics; magnetization reversal (TMR); tunneling magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2005.854937
