Title :
Complete transient simulation of flash EEPROM devices
Author :
Keeney, Stephen ; Bez, Roberto ; Cantarelli, Daniele ; Piccinini, Francesco ; Mathewson, Alan ; Ravazzi, Leonardo ; Lombardi, Claudio
Author_Institution :
Univ. Coll. Cork, Ireland
fDate :
12/1/1992 12:00:00 AM
Abstract :
A two-dimensional device simulator which allows the complete transient simulation of nonvolatile memories is presented. The simulator has been derived from HFIELDS and incorporates models to account for Fowler-Nordheim tunneling, hot electron injection through silicon dioxide, and band-to-band tunneling in silicon. The physical models have been verified by comparing simulations with measurements performed on suitable test structures where good agreement has been obtained. The tool has been used to investigate flash EEPROM device scaling and to evaluate a published scaling scenario
Keywords :
EPROM; digital simulation; electronic engineering computing; hot carriers; semiconductor device models; semiconductor-insulator boundaries; transient response; tunnelling; Fowler-Nordheim tunneling; HFIELDS; SiO2-Si; band-to-band tunneling; device scaling; flash EEPROM devices; hot electron injection; memory devices; nonvolatile memories; physical models; transient simulation; two-dimensional device simulator; Analytical models; Capacitance; Circuit simulation; EPROM; Nonvolatile memory; Numerical simulation; SPICE; Secondary generated hot electron injection; Testing; Transient analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
