Improved selectivity of synthetic anti-ferromagnetic free Layer in high-density MRAM array

Author

Hwang, Injun ; Jeong, Woncheol ; Park, Jaehyun ; Park, Wanjun ; Jang, Youngman ; Cho, Youngjin ; Hwang, Soonwon ; Rhee, Jangroh ; Kim, Taewan

Author_Institution

Samsung Adv. Inst. of Technol., Kiheung, South Korea

Volume

41

Issue

10

fYear

2005

Firstpage

2673

Lastpage

2675

Abstract

We investigate switching characteristics of the patterned submicrometer magnetic tunnel junction (MTJ) cells incorporating with a NiFe single and a synthetic anti-ferromagnetic (SAF) as a free layer. The MTJs with single NiFe free layer show the increased probability of vortex appearance with increase of NiFe thickness. Even though the free layer thickness is decreased, single NiFe free layer shows large variation of switching field. However, the employment of the SAF free layer dramatically improves switching characteristics with the suppression of vortex states and single domain-like tendency.

Keywords

antiferromagnetic materials; magnetic storage; magnetisation reversal; random-access storage; remanence; MRAM array; MTJ cellssingle NiFe free layer; NiFe; SAF free layer; magnetic tunnel junction; synthetic antiferromagnetic free layer; Antiferromagnetic materials; Magnetic anisotropy; Magnetic field measurement; Magnetic films; Magnetic separation; Magnetic switching; Magnetic tunneling; Magnetoresistance; Perpendicular magnetic anisotropy; Remanence; MRAM; Magnetic tunnel junction; SAF free layer; remanence; selectivity; vortex;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2005.855287

Filename

1519084