Dual-channel strained-layer in GaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD

Author

Lammert, R.M. ; Cockerill, T.M. ; Forbes, D.V. ; Coleman, J.J.

Author_Institution

Mater. Res. Lab., Illinois Univ., Urbana, IL, USA

Volume

6

Issue

10

fYear

1994

Firstpage

1167

Lastpage

1169

Abstract

Selective-area metalorganic chemical vapor deposition is used to fabricate a dual-channel strained-layer InGaAs-GaAs-AlGaAs WDM source with integrated coupler. Threshold currents of 11.5 mA were obtained for 1100 μm long uncoated channels operating cw at room temperature. Both channels can be coupled into a single mode fiber without the need for an external coupler.

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; multiplexing equipment; optical communication equipment; optical couplers; optical fibres; semiconductor growth; semiconductor lasers; wavelength division multiplexing; 11.5 mA; 1100 mum; GaAs-GaAs-AlGaAs; WDM source; cw; dual-channel; integrated coupler; laser diodes; metalorganic chemical vapor deposition; room temperature; selective-area MOCVD; single mode fiber; strained-layer; threshold currents; uncoated channels; Epitaxial growth; Fiber lasers; Gallium arsenide; MOCVD; Optical arrays; Optical fiber communication; Optical fiber couplers; Silicon compounds; Waveguide lasers; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.329627

Filename

329627