Title :
Effect of spin-orbit split-off bands on GaInP/AlGaInP strained quantum well lasers
Author :
Kamiyama, Satoshi ; Uenoyama, Takeshi ; Mannoh, Masaya ; Ohnaka, Kiyoshi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
We theoretically analyzed the effect of the spin-orbit split-off band on GaInP/AlGaInP strained quantum well lasers using 6/spl times/6 Luttinger-Kohn Hamiltonian. Because of the small spin splitting energy of GaInP, we show that the spin-orbit split-off subbands strongly couple with heavy and light hole subbands, and linear gain properties are greatly different from those without the effect of spin-orbit split-off bands. The unstrained quantum well structure is most influenced by the spin-orbit split-off bands, and laser characteristics such as the differential gain and threshold current are degraded. The compressive-strained quantum well has the lowest threshold current, and the tensile-strained quantum well has largest differential gain, which is improved by the effect of the spin-orbit split-off bands.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser theory; semiconductor lasers; spin-orbit interactions; 6/spl times/6 Luttinger-Kohn Hamiltonian; GaInP-AlGaInP; GaInP/AlGaInP strained quantum well lasers; compressive-strained quantum well; differential gain; laser characteristics; light hole subbands; linear gain properties; lowest threshold current; small spin splitting energy; spin-orbit split-off bands; spin-orbit split-off subbands; strongly couple; tensile-strained quantum well; threshold current; Capacitive sensors; Gallium arsenide; Laser theory; Optical coupling; Orbital calculations; Photonic band gap; Quantum mechanics; Quantum well lasers; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
