DocumentCode :
1190101
Title :
Exchange bias and giant magnetoresistance in spin valves with Angström-scale antiferromagnetic Layers at 5 K
Author :
Perdue, K.L. ; Carey, M.J. ; Sparks, P.D. ; Eckert, J.C.
Author_Institution :
Dept. of Phys., Harvey Mudd Coll., Claremont, CA, USA
Volume :
41
Issue :
10
fYear :
2005
Firstpage :
2706
Lastpage :
2708
Abstract :
We have studied the effects on the exchange bias of decreasing the antiferromagnetic layer to the Angström-scale regime in order to shed light on the minimum required thickness of the antiferromagnet. We have deposited IrMn layers between 0.2 and 2 nm on spin valves and measured the exchange bias by examining hysteresis loops at 5 K using the giant magnetoresistance of the spin valves. The exchange bias persists for IrMn thicknesses down to 0.4 nm and has a maximum at 1.6 nm. Because the ultra-thin layers create an exchange field, the origin of at least one component of exchange biasing must have a similarly short length scale.
Keywords :
antiferromagnetism; exchange interactions (electron); giant magnetoresistance; iridium alloys; magnetic hysteresis; magnetic thin films; manganese alloys; spin valves; 5 K; Angstrom-scale; IrMn; antiferromagnetic layers; exchange bias; giant magnetoresistance; hysteresis loops; spin valves; Antiferromagnetic materials; Giant magnetoresistance; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Spin valves; Temperature distribution; Temperature measurement; Thickness measurement; USA Councils; Antiferromagnetic materials; giant magnetoresistance; interface magnetism;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2005.855224
Filename :
1519095
Link To Document :
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