Preparation of Fe-doped ZnO ferromagnetic semiconductor by sol-gel method with hydrogen treatment

Author

Ahn, Geun Young ; Park, Seung-Iel ; Kim, Sam Jin ; Lee, Bo Wha ; Chul Sung Kim

Author_Institution

Dept. of Phys., Kookmin Univ., Seoul, South Korea

Volume

41

Issue

10

fYear

2005

Firstpage

2730

Lastpage

2732

Abstract

Zn/sub 1-x/Fe/sub x/O (x=0.00,0.01,0.03,0.05,0.07, and 0.10) compounds were fabricated by the sol-gel method. The crystal structure and magnetic properties were investigated as a function of doped Fe concentration. Specifically, we have used hydrogen treatment for the control of phase separation. The X-ray diffraction patterns show that the wurzite structure of ZnO does not change for the doping range below x=0.07. Furthermore, we could not find any Fe cluster or phase separation in the X-ray diffraction patterns. The Fe-doped ZnO indicate ferromagnetic behaviors with the Curie temperature higher than room temperature. Then, the magnetic moment per Fe atom increased with increasing Fe concentration.

Keywords

Curie temperature; X-ray diffraction; crystal structure; ferromagnetic materials; iron alloys; magnetic moments; magnetoelectronics; phase separation; semimagnetic semiconductors; sol-gel processing; zinc alloys; Curie temperature; X-ray diffraction patterns; ZnO:Fe; crystal structure; diluted magnetic semiconductor; ferromagnetic materials; ferromagnetic semiconductor; hydrogen treatment; magnetic moment; magnetic properties; materials preparation; phase separation; sol-gel method; spintronics; wurzite structure; Annealing; Hydrogen; Iron; Magnetic properties; Optical materials; Semiconductor device doping; Temperature; X-ray diffraction; X-ray scattering; Zinc oxide; Diluted magnetic semiconductor (DMS); ferromagnetic; hydrogen treatment; spintronics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2005.854685

Filename

1519103