Strained InGaAs/InAlAs MQW electroabsorption modulators with large bandwidth and low driving voltage

Author

Ido, T. ; Sano, H. ; Moss, D.J. ; Tanaka, S. ; Takai, A.

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

Volume

6

Issue

10

fYear

1994

Firstpage

1207

Lastpage

1209

Abstract

We demonstrate the improved modulation properties of a new strained InGaAs/InAlAs MQW electro-absorption modulator. This tensile strained MQW modulator shows low driving voltage (V/sub 15 dB/=1.2 V), large modulation bandwidth (f/sub 3 dB/>20 GHz), and a 10 Gbit/s eye pattern with a clear eye opening and high extinction ratio. The effective /spl alpha/ parameter determined from waveform deterioration is 0.6, which is low enough for multigigabit long-haul fiber transmission systems.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical modulation; semiconductor quantum wells; 1.2 V; 10 Gbit/s; 20 GHz; InGaAs-InAlAs; InGaAs/InAlAs MQW electroabsorption modulators; clear eye opening; effective /spl alpha/ parameter; eye pattern; high extinction ratio; large bandwidth; low driving voltage; modulation properties; multigigabit long-haul fiber transmission systems; strained MQW electroabsorption modulators; tensile strained; waveform deterioration; Absorption; Bandwidth; Indium compounds; Indium gallium arsenide; Low voltage; Optical modulation; Optical waveguides; Photonic band gap; Quantum well devices; Tensile strain;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.329640

Filename

329640