DocumentCode
1190187
Title
All-binary InAs/GaAs optical waveguide phase modulator at 1.06 μm
Author
Hasenberg, T.C. ; Koehler, S.D. ; Yap, D. ; Kost, A. ; Garmire, E.M.
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
Volume
6
Issue
10
fYear
1994
Firstpage
1210
Lastpage
1212
Abstract
We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period strained-layer superlattice quantum wells for optical waveguide modulation at 1.06 μm. We achieve /spl pi/ phase modulation with 2.3 V applied (V/sub /spl pi//×L=4.6 V mm, or 39/spl deg//V mm) in the presence of negligible absorption change using this all-binary modulator.
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical modulation; optical waveguides; phase modulation; semiconductor quantum wells; semiconductor superlattices; /spl pi/ phase modulation; 1.06 mum; 2.3 V; InAs-GaAs; InAs/GaAs optical waveguide phase modulator; absorption change; all-binary modulator; optical waveguide modulation; short-period; strained-layer; superlattice quantum wells; Absorption; Gallium arsenide; Optical modulation; Optical refraction; Optical sensors; Optical superlattices; Optical waveguides; Phase measurement; Phase modulation; Waveguide transitions;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.329641
Filename
329641
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