Distributed modeling of switching transients in GaAs MESFET´s

Author

Akhtar, Salman ; Tiwari, Sandip

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

39

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2819

Lastpage

2821

Abstract

The transient phenomena resulting from the application of a step bias at the gate electrode of a GaAs MESFET have been simulated using a two-dimensional model. Results emphasizing the effects of the displacement current in high-speed devices are presented. The causes of the delay are discussed for devices of different gate lengths, and the effects of the distributed gate capacitance and the related delay in the drain current characteristics are incorporated in an equivalent circuit model. Analytical expressions derived from large-signal analysis are shown to conform with the results of two-dimensional simulation, allowing for an implementation in simulators such as SPICE

Keywords

III-V semiconductors; Schottky gate field effect transistors; capacitance; delays; digital simulation; equivalent circuits; gallium arsenide; semiconductor device models; switching; transient response; 2D simulation; GaAs; MESFET; SPICE; delay; displacement current; distributed gate capacitance; distributed modelling; drain current characteristics; equivalent circuit model; gate electrode; high-speed devices; large-signal analysis; step bias; switching transients; two-dimensional model; Analytical models; Capacitance; Circuit simulation; Delay effects; Distributed control; Electrodes; Equivalent circuits; Gallium arsenide; MESFETs; SPICE;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.168736

Filename

168736