Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization

Author

Tu, Chun-Hao ; Chang, Ting-Chang ; Liu, Po-Tsun ; Yang, Che-Yu ; Feng, Li-Wei ; Tsai, Chia-Chou ; Chang, Li-Ting ; Wu, Yung-Chun ; Sze, Simon M. ; Chang, Chun-Yen

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsin-Chu

Volume

3

Issue

1

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

45

Lastpage

51

Abstract

Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones

Keywords

annealing; elemental semiconductors; fluorine; ion implantation; polymer films; silicon; thin film transistors; excimer laser crystallization; ion implantation; solid phase crystallization; thermal annealing; thin-film transistors; trap state density; Crystallization; Displays; Electric variables; Hot carriers; Hydrogen; Optical device fabrication; Rapid thermal annealing; Silicon; Solid lasers; Thin film transistors; Excimer laser crystallization (ELC); F-ions implant; SPC; polycrystalline silicon thin-film transistors (poly-Si TFTs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2006.890707

Filename

4114323