Title :
35-GHz HEMT amplifiers fabricated using integrated HEMT-HBT material grown by selective MBE
Author :
Umemoto, D.K. ; Streit, D.C. ; Kobayashi, K.W. ; Oki, A.K.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We have fabricated 35-GHz balanced low-noise amplifiers using pseudomorphic InGaAs-GaAs HEMT material monolithically integrated with HBT material grown by selective MBE. The 0.2-μm T-gate HEMT amplifiers fabricated using a merged HEMT-HBT process have equivalent gain and noise figure compared to amplifiers fabricated using normal MBE and our baseline HEMT-only process. This demonstration of high performance HEMT amplifiers using integrated HEMT-HBT material and a merged HEMT-HBT process enables the fabrication of a new class of multifunction monolithic microwave integrated circuits.
Keywords :
III-V semiconductors; MMIC; differential amplifiers; field effect integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; microwave amplifiers; microwave integrated circuits; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 0.2 micron; 35 GHz; InGaAs-GaAs; T-gate HEMT amplifiers; balanced low-noise amplifiers; gain; integrated HEMT-HBT material; multifunction monolithic microwave integrated circuits; noise figure; pseudomorphic InGaAs-GaAs HEMT material; selective MBE; HEMTs; Heterojunction bipolar transistors; Integrated circuit technology; Low-noise amplifiers; Microwave circuits; Microwave devices; Molecular beam epitaxial growth; Monolithic integrated circuits; Production; Protection;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
